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Asymmetrical resonant cavity thin film devices designed for vanadium dioxide applications

Abstract

In this paper, Vanadium dioxide (VO2) thin-film devices with two different use cases have been redesigned to introduce an asymmetrical resonant cavity structure. The structure is designed with the goal of enhancing the optical performance of the central VO2 layer and has an anti-reflection property in the cold state. The advantages and limitations of such a design are discussed.

Objective

ปัจจุบันมีงานวิจัยเพื่อออกแบบอุปกรณ์ฟิล์มบางทางแสงเป็นจำนวนมาก เราสามารถใช้คุณสมบัติของวัสดุเปลี่ยนเฟส (PCMs) เพื่อออกแบบอุปกรณ์ที่ทำงานได้สองโหมด อีกทั้งยังมีการออกแบบฟิล์มบางให้มีโครงสร้างเป็นช่องสั่นพ้องเพื่อเพิ่มประสิทธิภาพและปรับย่านการทำงานให้เหมาะสม แต่วิธีการออกแบบช่องสั่นพ้องปกติไม่สามารถใช้ได้กับวัสดุเปลี่ยนเฟส งานวิจัยนี้จะเป็นการเปรียบเทียบวิธีการออกแบบช่องสั่นพ้องที่ไม่สมมาตรเพื่อแก้ปัญหาข้างต้น โดยจะเทียบกับวิธีปกติของอุปกรณ์ฟิล์มบางในงานวิจัยที่มีอยู่ โดยแสดงถึงข้อดีและข้อจำกัดของวิธีการออกแบบใหม่นี้

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